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| MMA20312BVt1 1 rf device data freescale semiconductor, inc. heterojunction bipolar transistor technology (ingap hbt) high efficiency/linearity amplifier the MMA20312BV is a 2--stage high efficiency, class ab ingap hbt amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. it is suitable for applications with frequencies from 1800 to 2200 mhz such as cdma, td--scdma, pcs, umts and lte at operating voltages from 3 to 5 volts. the amplifier is housed in a cost--effective, surface mount qfn plastic package. ? typical performance: v cc =5volts,i cq =70ma,p out =17dbm frequency g ps (db) acpr (dbc) pae (%) test signal 1880 mhz 29.0 --47.4 9.1 td--scdma 1920 mhz 29.0 --46.7 9.0 td--scdma 2010 mhz 27.4 --52.0 9.3 td--scdma 2025 mhz 26.8 --50.0 9.5 td--scdma 2140 mhz 27.0 --51.7 9.4 w--cdma features ? frequency: 1800--2200 mhz ? p1db: 30.5 dbm @ 2140 mhz (cw application circuit) ? power gain: 26.4 db @ 2140 mhz (cw application circuit) ? oip3: 44.5 dbm @ 2140 mhz (w--cdma application circuit) ? active bias control (adjustable externally) ? single 3 to 5 volt supply ? cost--effective qfn surface mount package ? in tape and reel. t1 suffix = 1000 units, 12 mm tape width, 7 inch reel. table 1. typical performance (1) characteristic symbol 1800 mhz 2140 mhz 2200 mhz unit small--signal gain (s21) g p 28.8 26.4 25.5 db input return loss (s11) irl --17.6 --10.9 -- 9 . 7 db output return loss (s22) orl --20.3 --14.7 --13.7 db power output @ 1db compression p1db 30.5 30.5 30.5 dbm 1. v cc1 =v cc2 =v bias =5vdc,t a =25 c, 50 ohm system, cw application circuit table 2. maximum ratings rating symbol value unit supply voltage v cc 6 v supply current i cc 550 ma rf input power p in 14 dbm storage temperature range t stg --65 to +150 c junction temperature (2) t j 150 c 2. for reliable operation, the j unction temperature should not exceed 150 c. table 3. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 86 c, v cc1 =v cc2 =v bias =5vdc r jc 52 c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. freescale semiconductor technical data document number: MMA20312BV rev. 1, 12/2011 1800--2200 mhz, 27.2 db 30.5 dbm ingap hbt MMA20312BVt1 case 2131--01 qfn 3x3 plastic ? freescale semiconductor, inc., 2011. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MMA20312BVt1 table 4. electrical characteristics (v cc1 =v cc2 =v bias = 5 vdc, 2140 mhz, t a =25 c, 50 ohm system, in freescale w--cdma application circuit) characteristic symbol min typ max unit small--signal gain (s21) (1) g p 23.6 27.2 ? db input return loss (s11) irl ? --10.7 ? db output return loss (s22) orl ? --15.5 ? db power output @ 1db compression, cw p1db ? 28.2 ? dbm third order output intercept point, two--tone cw oip3 ? 44.5 ? dbm noise figure nf ? 3.3 ? db supply current (1,2) i cq 62.5 70 77 ma supply voltage (2) v cc ? 5 ? v table 5. esd protection characteristics test methodology class human body model (per jesd22--a114) 0, rated to 150 v machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iii table 6. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c 1. specified data is based on performance of sol dered down part in w--cdma application circuit. 2. for reliable operation, the juncti on temperature should not exceed 150 c. figure 1. functional block diagram figure 2. pin connections v ba2 rf out rf in 19 28 37 12 11 10 456 rf out v cc1 v cc1 v ba1 v bias v cc2 gnd gnd gnd v ba2 rf out rf in rf out v cc1 v cc1 v ba1 v bias v cc2 bias circuit bias circuit gnd gnd gnd MMA20312BVt1 3 rf device data freescale semiconductor, inc. z4 0.080 x 0.030 microstrip z5 0.155 x 0.010 microstrip z6 0.045 x 0.010 microstrip z1 0.250 x 0.030 microstrip z2 0.035 x 0.030 microstrip z3 0.283 x 0.030 microstrip rf input figure 3. MMA20312BV test circuit schematic ? td--scdma, 5 volt operation v cc1 bias circuit c1 c2 z1 l1 c5 r1 r2 c8 v bias z4 z5 c17 c18 c19 rf output z6 c16 c13 v cc2 1 2 3 12 11 10 4 5 6 9 7 z2 c3 z3 c4 8 table 7. MMA20312BV test circuit component designati ons and values ? td--scdma, 5 volt operation part description part number manufacturer c1, c5 22 pf chip capacitors 06033j220gbs avx c2 1.8 pf chip capacitor 06035j1r8bbs avx c3 2.2 pf chip capacitor 06035j2r2bbs avx c4 5.6 pf chip capacitor 06035j5r6bbs avx c6, c7, c9 components not placed c8, c18 1 f chip capacitors grm188r61a105ka61 murata c13 10 pf chip capacitor 06035j100gbs avx c16, c19 10 f chip capacitors grm188r60j106me47 murata c17 0.1 f chip capacitor grm188r71h104ka93 murata l1 1.8 nh chip inductor ll1608--fs1n8s toko r1 330 ? chip resistor rr0816q--331--d susumu r2 1.5 k ? chip resistor rr0816q--152--d susumu pcb 0.014 , r =3.7 fr408 isola note: component numbers c6, c7 and c9 are labeled on board but not plac ed. c10, c11, c12, c14 and c15 are intentionally omitted. 4 rf device data freescale semiconductor, inc. MMA20312BVt1 c8 qfn 3x3--12b rev. 0 r1 r2 c5 c1 c2 l1 c16 c13 c3 c4 c17 c18 c19 rf in rf out v cc1 v cc2 figure 4. MMA20312BV test circuit component layout ? t d--scdma, 5 volt operation (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c6*, c7* and c9* are labeled on board but not placed. c9* c6* c7* v bias (1) table 7. MMA20312BV test circuit component designati ons and values ? td--scdma, 5 volt operation part description part number manufacturer c1, c5 22 pf chip capacitors 06033j220gbs avx c2 1.8 pf chip capacitor 06035j1r8bbs avx c3 2.2 pf chip capacitor 06035j2r2bbs avx c4 5.6 pf chip capacitor 06035j5r6bbs avx c6, c7, c9 components not placed c8, c18 1 f chip capacitors grm188r61a105ka61 murata c13 10 pf chip capacitor 06035j100gbs avx c16, c19 10 f chip capacitors grm188r60j106me47 murata c17 0.1 f chip capacitor grm188r71h104ka93 murata l1 1.8 nh chip inductor ll1608--fs1n8s toko r1 330 ? chip resistor rr0816q--331--d susumu r2 1.5 k ? chip resistor rr0816q--152--d susumu pcb 0.014 , r =3.7 fr408 isola note: component numbers c10, c11, c12, c14 and c15 are intentionally omitted. (test circuit component designations and values table repeated for reference.) MMA20312BVt1 5 rf device data freescale semiconductor, inc. typical characteristics ? td--scdma figure 5. s11 versus frequency versus temperature 2750 -- 3 5 0 1500 f, frequency (mhz) 1750 -- 5 -- 1 0 -- 1 5 -- 2 0 -- 2 5 -- 3 0 s11 (db) -- 4 0 c 2000 2250 2500 25 c 85 c figure 6. s21 versus frequency versus temperature 2750 0 35 1500 f, frequency (mhz) 1750 30 25 20 10 5 s21 (db) -- 4 0 c 2000 2250 2500 25 c 85 c figure 7. s22 versus frequency versus temperature 2750 -- 3 5 0 1500 f, frequency (mhz) 1750 -- 5 -- 1 0 -- 1 5 -- 2 0 -- 2 5 -- 3 0 s22 (db) -- 4 0 c 2000 2250 2500 25 c 85 c v cc1 =v cc2 =v bias =5vdc v cc1 =v cc2 =v bias =5vdc v cc1 =v cc2 =v bias =5vdc 15 6 rf device data freescale semiconductor, inc. MMA20312BVt1 typical characteristics ? td--scdma 180 40 60 figure 8. acpr versus collector current versus output power versus temperature p out , output power (dbm) -- 1 0 -- 1 5 -- 2 0 -- 5 0 17 -- 3 5 i cc , collector current (ma) acpr (dbc) -- 2 5 -- 4 5 79 80 100 120 140 160 -- 4 0 -- 5 5 23 200 20 0 -- 3 0 11 13 15 21 19 -- 4 0 c 25 c 85 c -- 4 0 c 25 c 85 c acpr 45 10 15 figure 9. power gain versus power added efficiency versus output power versus temperature p out , output power (dbm) 29 28 27 21 17 24 pae, power added efficiency (%) g ps , power gain (db) 26 22 79 20 25 30 35 40 23 20 23 50 5 0 25 11 13 15 21 19 -- 4 0 c 25 c 85 c -- 4 0 c 25 c 85 c 30 gain pae figure 10. p1db versus frequency versus temperature, cw f, frequency (mhz) 30 29 28 25 27 1800 24 26 1850 -- 4 0 c 25 c 85 c 31 1900 1950 2050 2000 p1db, 1 db compression point, cw (dbm) i cc v cc1 =v cc2 =v bias =5vdc f = 2017.5 mhz v cc1 =v cc2 =v bias =5vdc f = 2017.5 mhz v cc1 =v cc2 =v bias =5vdc -- 6 0 MMA20312BVt1 7 rf device data freescale semiconductor, inc. z4 0.080 x 0.030 microstrip z5 0.155 x 0.010 microstrip z6 0.045 x 0.010 microstrip z1 0.218 x 0.030 microstrip z2 0.068 x 0.030 microstrip z3 0.250 x 0.030 microstrip rf input figure 11. MMA20312BV test circuit schematic ? w--cdma, 5 volt operation v cc1 bias circuit c1 c2 z1 l1 c5 r1 r2 c8 v bias z4 z5 c17 c18 c19 rf output z6 c16 c13 v cc2 1 2 3 12 11 10 9 7 4 5 6 + c9 z2 c3 z3 c4 8 table 8. MMA20312BV test circuit c omponent designations and value s ? w--cdma, 5 volt operation part description part number manufacturer c1, c5 22 pf chip capacitors 06033j220gbs avx c2, c3 1.8 pf chip capacitors 06035j1r8bbs avx c4 5.6 pf chip capacitor 06035j5r6bbs avx c6, c7 components not placed c8, c18 1 f chip capacitors grm188r61a105ka61 murata c9 100 pf chip capacitor grm1885c1h101ja01 murata c13 10 pf chip capacitor 06035j100gbs avx c16, c19 10 f chip capacitors grm188r60j106me47 murata c17 0.1 f chip capacitor grm188r71h104ka93 murata l1 1.8 nh chip inductor ll1608--fs1n8s toko r1 330 ? chip resistor rr0816q--331--d susumu r2 1500 ? chip resistor rr0816q--152 ? d susumu pcb 0.014 , r =3.7 fr408 isola note: component numbers c6 and c7 are labeled on board but not placed. c10, c11, c12, c14 and c15 are intentionally omitted. 8 rf device data freescale semiconductor, inc. MMA20312BVt1 figure 12. MMA20312BV test circuit component layout ? w--cdma, 5 volt operation c8 qfn 3x3--12b rev. 0 r1 r2 c5 c1 c2 c16 c13 c4 c17 c18 c19 rf in rf out v cc1 v cc2 l1 c9 c3 (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c6* and c7* are labeled on board but not placed. c6* c7* v bias (1) table 8. MMA20312BV test circuit c omponent designations and value s ? w--cdma, 5 volt operation part description part number manufacturer c1, c5 22 pf chip capacitors 06033j220gbs avx c2, c3 1.8 pf chip capacitors 06035j1r8bbs avx c4 5.6 pf chip capacitor 06035j5r6bbs avx c6, c7 components not placed c8, c18 1 f chip capacitors grm188r61a105ka61 murata c9 100 pf chip capacitor grm1885c1h101ja01 murata c13 10 pf chip capacitor 06035j100gbs avx c16, c19 10 f chip capacitors grm188r60j106me47 murata c17 0.1 f chip capacitor grm188r71h104ka93 murata l1 1.8 nh chip inductor ll1608--fs1n8s toko r1 330 ? chip resistor rr0816q--331--d susumu r2 1500 ? chip resistor rr0816q--152 ? d susumu pcb 0.014 , r =3.7 fr408 isola note: component numbers c10, c11, c12, c14 and c15 are intentionally omitted. (test circuit component designations and values table repeated for reference.) MMA20312BVt1 9 rf device data freescale semiconductor, inc. typical characteristics ? w--cdma 180 40 60 figure 13. acpr versus collector current versus output power p out , output power (dbm) -- 1 0 -- 1 5 -- 2 0 -- 5 0 18 -- 3 5 i cc , collector current (ma) acpr (dbc) -- 2 5 -- 4 5 810 80 100 120 140 160 -- 4 0 -- 5 5 24 200 20 0 -- 3 0 12 14 16 22 20 acpr 45 10 15 figure 14. power gain versus power added efficiency versus output power p out , output power (dbm) 29 28 27 21 18 24 pae, power added efficiency (%) g ps , power gain (db) 26 22 810 20 25 30 35 40 23 20 24 50 5 0 25 12 14 16 22 20 30 gain pae figure 15. p1db versus frequency, cw f, frequency (mhz) 30 29 28 25 27 2100 24 26 2120 31 2140 2160 2200 2180 p1db, 1 db compression point, cw (dbm) i cc v cc1 =v cc2 =v bias =5vdc f = 2140 mhz v cc1 =v cc2 =v bias =5vdc f = 2140 mhz v cc1 =v cc2 =v bias =5vdc -- 6 0 10 rf device data freescale semiconductor, inc. MMA20312BVt1 z4 0.080 x 0.030 microstrip z5 0.048 x 0.010 microstrip z6 0.045 x 0.010 microstrip z1 0.250 x 0.030 microstrip z2 0.124 x 0.030 microstrip z3 0.195 x 0.030 microstrip rf input figure 16. MMA20312BV test circuit schematic ? is--95, 3.3 volt operation v cc1 bias circuit c1 c2 z1 l1 c5 r1 r2 c8 v bias z4 z5 c17 rf output z6 c16 c13 v cc2 1 2 3 12 11 10 4 5 6 9 7 c9 z2 c3 z3 c4 8 table 9. MMA20312BV test circuit c omponent designations and value s ? is--95, 3.3 volt operation part description part number manufacturer c1, c5, c9 22 pf chip capacitors 06033j220gbs avx c2 2.2 pf chip capacitor 06035j2r2bbs avx c3 2.4 pf chip capacitor 06035j2r4bbs avx c4 4.7 pf chip capacitor 06035j4r7bbs avx c6, c7, c18, c19 components not placed c8, c17 1 f chip capacitors grm188r61a105ka61 murata c13 10 pf chip capacitor 06035j100gbs avx c16 4.7 f chip capacitor grm188r60j106me47 murata l1 1.5 nh chip inductor ll1608--fs1n5s toko r1 82 ? chip resistor rr0816q--820--d susumu r2 510 ? chip resistor rr0816q--511--d susumu pcb 0.014 , r =3.7 fr408 isola note: component numbers c6, c7, c18 and c19 are labeled on board but not pl aced. c10, c11, c12, c14 and c15 are intentionally omitted. MMA20312BVt1 11 rf device data freescale semiconductor, inc. c8 qfn 3x3--12b rev. 0 r1 r2 c5 c1 c2 l1 c16 c13 c3 c4 c17 rf in rf out v cc1 v cc2 figure 17. MMA20312BV test circuit component layout ? is--95, 3.3 volt operation (1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]. note: component numbers c6*, c7*, c18* and c19* are labeled on board but not placed. c9 c6* c7* c18* c19* v bias (1) table 9. MMA20312BV test circuit c omponent designations and value s ? is--95, 3.3 volt operation part description part number manufacturer c1, c5, c9 22 pf chip capacitors 06033j220gbs avx c2 2.2 pf chip capacitor 06035j2r2bbs avx c3 2.4 pf chip capacitor 06035j2r4bbs avx c4 4.7 pf chip capacitor 06035j4r7bbs avx c6, c7, c18, c19 components not placed c8, c17 1 f chip capacitors grm188r61a105ka61 murata c13 10 pf chip capacitor 06035j100gbs avx c16 4.7 f chip capacitor grm188r60j106me47 murata l1 1.5 nh chip inductor ll1608--fs1n5s toko r1 82 ? chip resistor rr0816q--820--d susumu r2 510 ? chip resistor rr0816q--511--d susumu pcb 0.014 , r =3.7 fr408 isola note: component numbers c10, c11, c12, c14 and c15 are intentionally omitted. (test circuit component designations and values table repeated for reference.) 12 rf device data freescale semiconductor, inc. MMA20312BVt1 typical characteristics ? is--95 18 810 22 12 14 16 20 180 40 60 figure 18. acpr versus collector current versus output power p out , output power (dbm) -- 1 0 -- 1 5 -- 2 0 -- 5 0 18 -- 3 5 i cc , collector current (ma) acpr (dbc) -- 2 5 -- 4 5 810 80 100 120 140 160 -- 4 0 -- 5 5 22 200 20 0 -- 3 0 12 14 16 20 acpr 45 10 15 figure 19. power gain versus power added efficiency versus output power p out , output power (dbm) 29 28 27 21 24 pae, power added efficiency (%) g ps , power gain (db) 26 22 20 25 30 35 40 23 20 50 5 0 25 30 gain pae figure 20. p1db versus frequency, cw f, frequency (mhz) 30 29 28 25 27 1800 24 26 1840 31 1880 1920 2000 1960 p1db, 1 db compression point, cw (dbm) i cc v cc1 =v cc2 =v bias =3.3vdc -- 6 0 v cc1 =v cc2 =v bias =3.3vdc f = 1960 mhz v cc1 =v cc2 =v bias =3.3vdc f = 1960 mhz single--carrier is--95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth single--carrier is--95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth MMA20312BVt1 13 rf device data freescale semiconductor, inc. figure 21. pcb pad layout for qfn 3x3 3.00 3.40 2.00 0.50 0.30 1.6 x 1.6 solder pad with thermal via structure 0.70 figure 22. product marking ma02 ywz 14 rf device data freescale semiconductor, inc. MMA20312BVt1 package dimensions MMA20312BVt1 15 rf device data freescale semiconductor, inc. 16 rf device data freescale semiconductor, inc. MMA20312BVt1 MMA20312BVt1 17 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers software ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 aug. 2011 ? initial release of data sheet 1 dec. 2011 ? updated minimum operating voltage from 3.3 v to 3 v to reflect actual device capability, p. 1 ? all references to ?v ctrl ? in the data sheet tables, test circuit schematics and component layouts is replaced with ?v bias ?. v bias is the supply voltage which sets the inte rnal bias conditions via pins 1, 2, and 12, p. 1--3, 5--7, 9, 10, 12. footnote ?(1) v bias [board] supplies v ba1 ,v ba2 and v bias [device]? added to test circuit component layouts, p. 4, 8, 11. 18 rf device data freescale semiconductor, inc. MMA20312BVt1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MMA20312BV rev. 1, 12/2011 |
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